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The development of the domestic LED industry started from the 70's of last century. Mainly made up of materials like GaP and GaAlAs, the LED research and industrialization has begun. Many colleges and institutes got into the study of the High Bright LED based on the 4-element series based on GaAlAs and GaN system from the 90's. What's more, a lot of powerful enterprises have been investing in High Bright and White LED industry in recent years, thus promoting the industry development rapidly to a yearly turnout of 10 billion pieces of High Bright LED chips and 30 billion pieces of packaging. As it is shown in the figure, the growth rate of High Bright chips exceeds 100% while that of the device exceeds 50%.

According to the statistics and evaluation made by the industry association, excluding the overseas investment enterprises, there are more than 1000 domestic companies based on LED industry. Except for the epitaxial equipments and part of raw materials, domestic companies have a strong matching capability of major raw materials, manufacturing equipments testing instruments and key matching parts of LED products, such as phosphor, LED driving IC, application lamps, lead frames and matching tooling. A complete industry chain has been formed. Some domestic colleges and institutes have started the basic research on Ⅲ-Ⅴ family compound material epitaxial long ago, therefore, when ultra high bright LED was successfully developed after research was done on the 4-element series based onInGaAlp and GaN in the 90's internationally, research and development was started in this aspect in time by the following research units and organizations – Beijing University, Qinghua University, Nanchang University, Shandong University, South China Normal University, Beijing Industrial University, CAS Institute of Semiconductors, CAS Institute of Physics, China National Electronics Group. Their chief fruits are: GaN epitaxy layer grown on silicon base, GaN basic blue light wave length shift, ohm problem on P section, ITO transparent electrode application, Al2O3 base peel-off by laser, raising the efficiency of extended inner quanta and outer quanta of the die, anti-light attenuation ability and the heat sink of power die, etc. The developed power LED die could be industrialized, its luminescence efficiency is about 40lm/w, and could reach as high as 50lm/w, the emitting power of single device is 150mw，and could be as high as 190mw.